全國統(tǒng)一電話
Diameter | 4" | 5" | 6" | 8" | |
Device Layer | Dopant | Boron, Phos, Arsenic, Antimony, Undoped | |||
Orientation | <100>, <111> | ||||
Type | SIMOX, BESOI, Simbond, Smart-cut | ||||
Resistivity | 0.001-20000 Ohm-cm | ||||
Thickness (um) | 0.2-150 | ||||
The Uniformity | <5% | ||||
BOX Layer | Thickness (um) | 0.4-3 | |||
Uniformity | <2.5% | ||||
Substrate | Orientation | <100>, <111> | |||
Type/Dopant | P Type/Boron , N Type/Phos, N Type/As, N Type/Sb | ||||
Thickness (um) | 300-725 | ||||
Resistivity | 0.001-20000 Ohm-cm | ||||
Surface Finished | P/P, P/E | ||||
Particle | <10@.0.3um |