wide-bandgap(SiC/GaN)

美國AOS萬代wide-bandgap(SiC/GaN)寬禁帶半導(dǎo)體材料是固態(tài)光源和電力電子、微波射頻器件的重要元件在半導(dǎo)體照明、新一代移動(dòng)通信、智能電網(wǎng)、高速軌道交通、新能源汽車、消費(fèi)類電子等領(lǐng)域具有廣闊的應(yīng)用前景，可望成為支撐信息、能源、交通等產(chǎn)業(yè)發(fā)展的重點(diǎn)新材料，適合于制作抗輻射、高頻、大功率和高密度集成的電子器件。

產(chǎn)品詳情

萬代Silicon Carbide (SiC) MOSFETs產(chǎn)品型號及應(yīng)用參數(shù)

Part Number	Status	Package	Qualification	描述	VDSmax	RDS(on)typ.	VGS,OP	ID	Qrr
Part Number	Status	Package	Qualification	描述	V	m?	V	A	nC
AOK033V120X2	New	TO247	Industrial	1200V Silicon Carbide MOSFET	1,200	33	15	68	226
AOK150V120X2	New	TO247	Industrial	1200V Silicon Carbide MOSFET	1,200	150	15	20	87.5
AOK500V120X2	New	TO247	Industrial	1200V Silicon Carbide MOSFET	1,200	500	15	6.3	50
AOM033V120X2	New	TO247-4L	Industrial	1200V Silicon Carbide MOSFET	1,200	33	15	68	226
AOK033V120X2Q	Full Production	TO247	Automotive	1200V Silicon Carbide MOSFET	1,200	33	15	68	226
AOK065V120X2	Full Production	TO247	Industrial	1200V Silicon Carbide MOSFET	1,200	65	15	40	155
AOK065V65X2	Full Production	TO247	Industrial	650V Silicon Carbide MOSFET	650	65	15	33	104
AOK150V120X2Q	Full Production	TO247	Automotive	1200V Silicon Carbide MOSFET	1,200	150	15	20	87.5
AOM033V120X2Q	Full Production	TO247-4L	Automotive	1200V Silicon Carbide MOSFET	1,200	33	15	68	226
AOM065V120X2	Full Production	TO247-4L	Industrial	1200V Silicon Carbide MOSFET	1,200	65	15	40	142
AOM065V120X2Q	Full Production	TO247-4L	Automotive	1200V Silicon Carbide MOSFET	1,200	65	15	40	142

萬代Silicon Carbide (SiC) Diodes產(chǎn)品型號及應(yīng)用參數(shù)

Part Number	Status	Package	Qualification	描述	Configuration	VDC	IF	VF	QC
Part Number	Status	Package	Qualification	描述	Configuration	V	A	V	nC
AOK20120XSD	New	TO247	Industrial	1200V Silicon Carbide Schottky Diode	Dual	1,200	20	1.45	136
AOK40120XSD	New	TO247	Industrial	1200V Silicon Carbide Schottky Diode	Dual	1,200	40	1.45	244